Compact mask programmable ROM

Details Compact mask programmable ROM Compact mask programmable ROM

2006-03-21

2006-03-21

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S391000, C365S103000, C365S104000

Reexamination Certificate

active

07015553

ABSTRACT:
A compact mask programmable read-only memory (Mask ROM) is described, comprising a plurality of word lines, a plurality of bit lines, and a plurality of MOS-type and diffusion-type memory cells arranged in an array. The memory cells in one column are coupled to one bit line, and the gates of the MOS-type cells in one row are coupled to one word line via contacts, wherein two columns of memory cells share a column of contacts. A MOS-type cell shares its source and drain with two memory cells in the same column, and a diffusion-type cell directly connects with the diffusions of two adjacent memory cells. A constant number of continuous memory cells are grouped as a memory string, wherein the two diffusions of the two terminal memory cells are electrically connected to a bank select transistor and a ground line, respectively.

REFERENCES:
patent: 4151020 (1979-04-01), McElroy
patent: 2004/0217379 (2004-11-01), Liou et al.

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