Compact, dual-transistor integrated circuit

Details Compact, dual-transistor integrated circuit Compact, dual-transistor integrated circuit

1997-03-26

1999-07-06

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 67, 257382, 257393, 257401, 257412, 438149, 438213, 438279, H01L 2972

Patent

active

059200979

ABSTRACT:
A compact, integrated semiconductor device includes a first transistor and a second transistor. The first transistor has a gate formed by a first portion of a gate material. A second portion of the gate material provides the bulk material for a second transistor. The device can be utilized in a six-transistor SRAM cell. The two-transistor structure can include a p-channel transistor and an n-channel transistor of such a cell.

REFERENCES:
patent: 5350932 (1994-09-01), Malhi

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