Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2007-11-27
2007-11-27
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S049130
Reexamination Certificate
active
11266501
ABSTRACT:
A memory system incorporating redundancy utilizes a content addressable memory to monitor addresses during memory accesses. The content addressable memory provides a pointer to an alternate memory location when a previously determined faulty location is requested. Redundant memory cells are accessed by use of column redundancy information output from the content addressable memory. During a memory access cycle a register in the content addressable memory latches a memory address. The content addressable memory decodes the address and produces column redundancy information as an output. The column redundancy information is latched during a period complementary to the memory access cycle. By utilizing complementary memory access phases to latch memory addresses in contrast with a utilization of column redundancy information, a single set of registers may be used. Additionally, concurrent read and write operations are supported.
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Nguyen Dixie H.
Trinh Stephen T.
Atmel Corporation
Schneck Thomas
Schneck & Schneck
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