Static information storage and retrieval – Floating gate – Particular connection
Patent
1996-01-11
1998-09-15
Zarabian, A.
Static information storage and retrieval
Floating gate
Particular connection
36518522, G11C 1134
Patent
active
058089357
ABSTRACT:
A nonvolatile semiconductor memory having a common source line driving circuit which simply ensures a sufficient threshold voltage margin for erased memory cells during an erase verifying operation. The nonvolatile semiconductor memory includes a resistance which cause, during an erase verifying operation of the memory after erasure of the memory cells, an erase verifying potential to develop on the common source line, allowing verification that each memory cell has a predetermined threshold voltage. The erase verifying voltage is developed across the resistance in response to a predetermined current supplied from a current source circuit connected to the bit line, and flowing through the drain-source paths of memory cells which are series-connected between the bit line and the current source line.
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Kim Jin-Ki
Kwon Seok-Chun
Samsung Electronics Co,. Ltd.
Zarabian A.
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