Common source line driving circuit for use in nonvolatile semico

Details Common source line driving circuit for use in nonvolatile semico Common source line driving circuit for use in nonvolatile semico

1996-01-11

1998-09-15

Zarabian, A.

Static information storage and retrieval

Floating gate

Particular connection

36518522, G11C 1134

Patent

active

058089357

ABSTRACT:
A nonvolatile semiconductor memory having a common source line driving circuit which simply ensures a sufficient threshold voltage margin for erased memory cells during an erase verifying operation. The nonvolatile semiconductor memory includes a resistance which cause, during an erase verifying operation of the memory after erasure of the memory cells, an erase verifying potential to develop on the common source line, allowing verification that each memory cell has a predetermined threshold voltage. The erase verifying voltage is developed across the resistance in response to a predetermined current supplied from a current source circuit connected to the bit line, and flowing through the drain-source paths of memory cells which are series-connected between the bit line and the current source line.

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