Common memory gate non-volatile transistor memory

Details Common memory gate non-volatile transistor memory Common memory gate non-volatile transistor memory

1982-08-25

1985-07-02

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365182, 365218, G11C 1140

Patent

active

045272573

ABSTRACT:
A non-volatile semiconductor memory is described incorporating a fixed threshold transistor and a variable threshold transistor in each memory cell. The fixed threshold transistor is used for row selection while the variable threshold transistor stores the data. A common memory gate line throughout the memory permits block erase to one logic state with opposite data being written in on a row-by-row basis. Information is read out from a selected row by a ramp voltage on the memory gate line which is capacitively coupled through variable threshold transistors having a channel in the body below the gate region.

REFERENCES:
patent: 4103348 (1978-07-01), Fagan
patent: 4385308 (1983-05-01), Uchida

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