Common-line connection for integrated memory array

Static information storage and retrieval – Read/write circuit

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Details

36518905, G11C 1300

Patent

active

051970295

ABSTRACT:
A common connection to reduces the amount of chip area required to perform read and programming functions, particularly where signals such as read, programming, supply voltage and data signals are generated from remote locations on the memory chip. The common connection is made in an integrated circuit having a control circuit, a plurality of memory cell arrays having column lines, a sense amplifier circuit, and a programming circuit including at least first and second parts. At least one column of one memory cell array is selectively connected to a common line
ode upon receiving at least a first signal from the control circuit. The first part of the programming circuit is selectively connected to the common line
ode upon receiving a second signal from the control circuit. The second part of the programming circuit is connected to the common line
ode upon receiving a third signal from the control circuit. The sense amplifier circuit is selectively connected to the common line
ode upon receiving a fourth signal from the control circuit. The common line
ode may be a conductor extending from a first area of the integrated-circuit memory to a second area of the integrated-circuit memory, the first and second areas including, for example, the first and second parts of the programming circuit respectively located at opposite ends of the integrated-circuit memory. The first part of the programming circuit may provide a high voltage to a source-column line of the integrated-circuit memory. The second part of the programming circuit may provide a reference potential and a supply voltage to the common line
ode.

REFERENCES:
patent: 4860255 (1989-08-01), Shimohigashi et al.

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