Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1990-04-19
1993-10-26
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257327, 257368, 257408, 257344, 257346, H01L 2910, H01L 2978, H01L 2968
Patent
active
052570959
ABSTRACT:
A field effect device transistor geometry and method of fabrication are described. The FET may be operated from a bias potential that forms an electrical field within the device exceeding a predetermined field strength. The device comprises a semiconductor substrate portion of a first conductivity type, said substrate portion having a major surface, and a region of a second conductivity type adjacent the major surface and adapted to receive the predetermined bias potential, the region including a subregion of like conductivity type and lesser conductivity, the subregion being positioned within the region such that the subregion receives at least that portion of the dipole electrical field including and exceeding the predetermined value.
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Cagnina Salvatore
Liu Yow-Juang (Bill)
Advanced Micro Devices , Inc.
Carroll J.
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