Command generation circuit and semiconductor memory device

Details Command generation circuit and semiconductor memory device Command generation circuit and semiconductor memory device

2008-12-31

2011-11-01

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Signals

C365S194000

Reexamination Certificate

active

08050117

ABSTRACT:
There is provided a command generation circuit. The command generation circuit includes a first driving unit driving an output node in response to an internal MRS command and a RAS idle signal; a second driving unit driving the output node in response to an off-signal; and a latch unit latching a signal at the output node in response to a power-up signal and generating an SRR command.

REFERENCES:
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patent: 7136307 (2006-11-01), Piersimoni et al.
patent: 7254076 (2007-08-01), Chae et al.
patent: 2010/0085816 (2010-04-01), Kim
patent: 10-2005-0045060 (2005-05-01), None
patent: 10-2008-0002593 (2008-01-01), None

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