COMFET switch and method

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode

Patent

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Details

257133, 257139, 257144, 257152, 257212, 257341, 257342, 257401, 257773, 257784, H01L 2968

Patent

active

054554420

ABSTRACT:
The performance of COMFET-based electrical switches may be improved by connecting a MOSFET substantially in parallel with the COMFET. In a monolithic embodiment, a MOSFET drain region may be added to a surface of a COMFET and shorted to the emitter region of the COMFET. The invention decreases the turn-off time of the COMFET, reduces the discontinuity at current direction reversal and increases the latch-up current of a semiconductor switch.

REFERENCES:
patent: 4689647 (1987-08-01), Nakagawa et al.
patent: 4985743 (1991-01-01), Tokura et al.
patent: 5170239 (1992-12-01), Hagino

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