Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Patent
1994-03-07
1995-10-03
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
257260, 257280, 257365, 257194, 257289, H01L 2701, H01L 2978
Patent
active
054554411
ABSTRACT:
A semiconductor device comprises a channel of a semiconductor material for passing carriers, a carrier injecting part for injecting the carriers into the channel and establishing an ohmic contact with the channel at a first location, a carrier collecting part for collecting the carriers from the channel, the carrier collecting part establishing an ohmic contact with the channel at a second, different location, a carrier control part provided on the channel at a third location located between the first and second locations, the carrier control part being applied with a control voltage and controlling the passage of the carriers through the channel from the carrier injecting means to the carrier collecting means in response to the control voltage, and an acceleration part provided between the first and third locations including the third location. The acceleration part is supplied with an acceleration voltage and producing an electric field that accelerates the carriers such that the electric field has a magnitude generally proportional to the acceleration voltage applied thereto.
REFERENCES:
patent: 4104673 (1978-08-01), Dickens
patent: 4639753 (1987-01-01), Yamada
patent: 5012315 (1991-04-01), Shur
patent: 5289027 (1994-02-01), Terrill et al.
Applied Physics Letters, vol. 54, No. 2, 9 Jan. 1989, New York, US, pp. 162-164, XP68447, Michael Shur "Split-gate field-effect transistor" * whole document *.
IEEE Electron Device Letters, vol. EDL5, No. 7, Jul. 1984, New York US, pp. 270-272, B. A. Vojak et al. "A Self-Aligned Dual-Grating GaAs permeable Base Transistor" * whole document *.
Journal of Applied Physics, vol. 62, No. 9, 1 Nov. 1987, New York, US, pp. 3816-3820, Jingming Xu et al. "Ballistic transport in hot.electron trasistors" * abstract; FIG. 6*.
Fujitsu Limited
Prenty Mark V.
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