Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-08-01
1998-04-14
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257292, 257293, 257440, 257443, 257462, H01L 31062, H01L 31113
Patent
active
057395624
ABSTRACT:
An active pixel image sensor includes an array of pixels arranged in a first group and a second group. The first group may constitute a row and the second group may constitute a column, for example. A first common conductor is coupled to the pixels in the first group for conducting control signals. A second common conductor is coupled to the pixels in the second group for selectively transmitting signals to processing electronics. Each of the pixels includes a plurality of sensing elements that are each configured for capturing a portion of energy from an object to be imaged. At least one of the sensing elements is of a type distinct from another of the sensing elements. For example, one of the sensing elements may be a photogate and another may be a photodiode. An amplifying arrangement is provided for receiving signals from selected ones of the plurality of sensing elements and for selectively providing output signals to the second common conductor.
REFERENCES:
patent: 5408113 (1995-04-01), Kanno et al.
patent: 5576763 (1996-11-01), Ackland et al.
Ackland Bryan David
Dickinson Alexander George
Inglis David Andrew
Lucent Technologies - Inc.
Ngo Ngan V.
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