Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-01-04
2011-01-04
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
Reexamination Certificate
active
07863071
ABSTRACT:
The present invention includes a fabrication method to construct a combined MEMS device and IC on a silicon-on-insulator (SOI) wafer (MEMS-IC) using standard foundry IC processing techniques. The invention also includes the resulting MEMS-IC. Deposition layers are added to the SOI wafer and etched away to form interconnects for electronic components for the IC. In one embodiment of the present invention, standard foundry IC processing etching techniques may be used to etch away parts of the insulating layer and device layer of the SOI wafer to create fine gaps and other detailed mechanical features of the MEMS device. Finely detailed etching patterns may be added by using imprint lithography instead of using contact or optical lithography.
REFERENCES:
patent: 6635509 (2003-10-01), Ouellet
patent: 6849558 (2005-02-01), Schaper
patent: 7023065 (2006-04-01), Ayazi et al.
patent: 7056757 (2006-06-01), Ayazi et al.
patent: 2005/0206479 (2005-09-01), Nguyen et al.
patent: 2006/0205106 (2006-09-01), Fukuda et al.
patent: 2007/0224832 (2007-09-01), Zurcher
Bhave et al.; Internal Electrostatic Transduction for Bulk-Mode MEMS Resonators; Jun. 6-10; Solid-State Sensor, Actuator and Microsystems Wokrshop; Hilton Head Island, South Carolina; p. 59.
Pacheco, Sergio et al., “RF MEMS Resonator for CMOS Back-End-Of-Line Integration,” Digest of Papers, Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Sep. 8-10, 2004, pp. 203-206.
Costa Julio
Hammond Jonathan Hale
Ivanov Tony
Wohlmuth Walter Anthony
Naraghi Ali
RF Micro Devices, Inc.
Such Matthew W
Withrow & Terranova, P.L.L.C.
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