Combined integrated circuit/ferroelectric memory device, and ion

Details Combined integrated circuit/ferroelectric memory device, and ion Combined integrated circuit/ferroelectric memory device, and ion

1985-05-14

1987-12-15

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

2041922, 20419225, C23C 1400

Patent

active

047131578

ABSTRACT:
Methods for forming targets of ferroelectric, metal nitrate or similar material, methods for depositing such materials using ion beam techniques, and a method for forming a combined and integrated circuit/ferroelectric memory device wherein the ferroelectric material is deposited using ion beam techniques.

REFERENCES:
patent: 3728694 (1973-04-01), Rohrer
patent: 4091138 (1978-05-01), Takaki et al.
patent: 4108751 (1978-08-01), King
patent: 4139857 (1979-02-01), Takaki et al.
patent: 4147573 (1979-04-01), Morimoto
patent: 4149301 (1979-04-01), Cook
patent: 4149302 (1979-04-01), Cook
patent: 4195355 (1980-03-01), Rohrer
patent: 4250009 (1981-02-01), Cuomo
Chemical Abstracts, 9th Collective Index, (1972-1976), p. 14931, G.S.
Castellano et al., J. Applied Physics, Jun. 1979, pp. 4406-4411.
Chemical Abstracts, 10th Collective Index, pp. 22572-22573.
Vossen et al., Thin Film Processes, Academic Press, N.Y., N.Y., 1978, p. 41, pp. 120-121.
Castellano, Ferroelectrics, 1980, vol. 28, pp. 387-390.

Affiliated with

Also associated with

Rating

Combined integrated circuit/ferroelectric memory device, and ion does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Combined integrated circuit/ferroelectric memory device, and ion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Combined integrated circuit/ferroelectric memory device, and ion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1218474