Combined field/trench isolation region fabrication methods

Details Combined field/trench isolation region fabrication methods Combined field/trench isolation region fabrication methods

1996-11-08

1998-09-08

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438427, 438426, H01L 2176

Patent

active

058044914

ABSTRACT:
Isolation regions are fabricated on a substrate by forming a pattern region on the substrate, exposing spaced apart first and second areas of the substrate. The second area is then covered, preferably using sidewall spacers formed adjacent sidewall portions of the pattern region, while a portion of the first area is left exposed. A first insulation region is then formed on the exposed portion of the first area. The second area is then exposed and a trench isolation region is formed at the second area. Preferably, the pattern region is formed by forming a masking layer on the substrate and patterning the masking layer using a single photolithographic mask. The first insulation layer preferably is formed by thermally oxidizing the exposed portion of the first area. Preferably, the first area is wider than the second area.

REFERENCES:
patent: 4842675 (1989-06-01), Chapman et al.
patent: 5372968 (1994-12-01), Lur et al.
patent: 5472904 (1995-12-01), Figura et al.
patent: 5498566 (1996-03-01), Lee
patent: 5679599 (1997-10-01), Mehta
patent: 5728620 (1998-03-01), Park

Affiliated with

Also associated with

Rating

Combined field/trench isolation region fabrication methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Combined field/trench isolation region fabrication methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Combined field/trench isolation region fabrication methods will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1281689