Combined etching and doping substances

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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Details

C438S745000, C438S753000, C438S757000, C136S261000, C216S089000, C216S096000, C216S099000, C216S108000, C216S109000

Reexamination Certificate

active

07629257

ABSTRACT:
The invention concerns etching and doping substances free of hydrochloric/fluoride acid used for etching inorganic layers as well as for doping subjacent layers. The invention also concerns a method wherein said substances are used.

REFERENCES:
patent: 283423 (1883-08-01), Schtjlze-Bebge
patent: 1470772 (1923-10-01), Leo
patent: 2067925 (1937-01-01), Clayton
patent: 2903345 (1959-09-01), Howard et al.
patent: 3810784 (1974-05-01), Hill et al.
patent: 4091169 (1978-05-01), Bohg et al.
patent: 4108704 (1978-08-01), Horne
patent: 4348255 (1982-09-01), Schmidt
patent: 4376673 (1983-03-01), Cheung
patent: 4578407 (1986-03-01), Amabile et al.
patent: 4761244 (1988-08-01), Scardera et al.
patent: 4781792 (1988-11-01), Hogan
patent: 4891325 (1990-01-01), Hezel et al.
patent: 4921626 (1990-05-01), Rhodenbaugh
patent: 6066267 (2000-05-01), Rath
patent: 6084175 (2000-07-01), Perry
patent: 6337029 (2002-01-01), Hardy et al.
patent: 6552414 (2003-04-01), Horzel et al.
patent: 6670281 (2003-12-01), Luly et al.
patent: 6695903 (2004-02-01), Kubelbeck et al.
patent: 2 104 087 (1994-02-01), None
patent: 153360 (1982-01-01), None
patent: 3725346 (1989-02-01), None
patent: 19910816 (2000-10-01), None
patent: 22915 (1981-01-01), None
patent: 0 299 915 (1989-01-01), None
patent: 58088142 (1983-05-01), None
patent: WO 9830652 (1998-07-01), None
patent: WO 0040518 (2000-07-01), None
patent: WO 0183391 (2001-11-01), None
K. Coates, 16thEuropean Photovoltaic Solar Energy Conference, Galsgow, p. 1279, (2000).
Definition of “Starch, modified.” From Hawley's Condensed Chemical Dictionary, 14th Ed. Obtained from http://www.knovel.com on Jan. 22, 2006.
Definition of “glass, plate.” From Hawley's Condensed Chemical Dictionary, 14th Edition Sons, Inc. Obtained from http://www.knovel.com on Feb. 3, 2005.
“A review of the chemical reaction mechanism and kinetics for hydrofluoric acid etching of silicon dioxide for surface micromachining applications”, David J. Monk et al., D. J. Monk et al. / Chemical reaction mechanism in HF etching of SiO2, pp. 1-12.
“Silicon dioxide sacrificial layer etching in surface micromachining”, J. Bohler et al., J. Miocroeng. 7 (1997), pp. R1-R13.
Tang O et al., “Column technology for capillary electrochromatography,” TRAC, Trends in Analytical Chemistry, Nov. 2000, pp. 648-663.
“Xanthan gum.” Chaplin, Martin. Retrieved from http://www.martin.chaplin.btinternet.co.uk/hyxan.html/ on Aug. 31, 2004.
Product description of KELZAN(tm). Retrieved from http://www.cpkelco.com/xanthan/industrial/index.html/ on Sep. 2, 2004.
“Dissociation Constants of Inorganic Acids and Bases.” CRC Handbook of Chemistry and Physics. 84th ed. 2003-2004, Retrieved Aug. 31, 2004 from http://www.hbcnetbase.com/.
English Abstract of JP-06065544-A. From Patent Abstracts of Japan. vol. 018, No. 313 (C-1212), Jun. 15, 1994.
van Gelder et al: The etching of Silicon Nitride in Phosphoric Acid with Silicon Dioxide as a Mask., Journal Electrochemical S. 114 (8), 869 (1967).
English translation of van Gelder et al: The etching of Silicon Nitride in Phosphoric Acid with Silicon Dioxide as a Mask., Journal Electrochemical S. 114 (8), 869 (1967).

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