Optics: measuring and testing – By polarized light examination – Of surface reflection
Reexamination Certificate
2005-11-08
2005-11-08
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
By polarized light examination
Of surface reflection
C356S364000
Reexamination Certificate
active
06963401
ABSTRACT:
A combination metrology tool is disclosed which is capable of obtaining both thermal wave and optical spectroscopy measurements on a semiconductor wafer. In a preferred embodiment, the principal combination includes a thermal wave measurement and a spectroscopic ellipsometric measurement. These measurements are used to characterize ion implantation processes in semiconductors over a large dosage range.
REFERENCES:
patent: 4634290 (1987-01-01), Rosencwaig et al.
patent: 4636088 (1987-01-01), Rosencwaig et al.
patent: 4854710 (1989-08-01), Opsal et al.
patent: 4999014 (1991-03-01), Gold et al.
patent: 5074669 (1991-12-01), Opsal
patent: 5181080 (1993-01-01), Fanton et al.
patent: 5206710 (1993-04-01), Geiler et al.
patent: 5536936 (1996-07-01), Drevillon et al.
patent: 5798837 (1998-08-01), Aspnes et al.
patent: 5900939 (1999-05-01), Aspnes et al.
patent: 5953446 (1999-09-01), Opsal et al.
patent: 5973787 (1999-10-01), Aspnes et al.
patent: 5978074 (1999-11-01), Opsal et al.
patent: 6008906 (1999-12-01), Maris
patent: 6128084 (2000-10-01), Nanbu et al.
patent: 6191846 (2001-02-01), Opsal et al.
patent: 6268916 (2001-07-01), Lee et al.
patent: 6278519 (2001-08-01), Rosencwaig et al.
patent: 6535285 (2003-03-01), Opsal et al.
patent: 6671047 (2003-12-01), Opsal et al.
patent: 6690473 (2004-02-01), Stanke et al.
patent: WO 99/10747 (1999-01-01), None
patent: WO 00/68656 (2000-11-01), None
M. Fried et al., “Nondestructive determination of damage depth profiles in ion-implanted semiconductors by spectroscopic ellipsometry using different optical models,”J. Appl. Phys.,vol. 71, No. 6, Mar. 15, 1992, pp. 2835-2843.
A.P. Webb et al., “Refractive index profiles induced by ion implantation into silica,”J. Phys. D: Appl. Phys.,vol. 9, 1976, pp. 1343-1354.
J.R. Adams, “Complex refractive index and phosphorus concentration profiles in P31 ion implanted silicon by ellipsometry and auger electron spectroscopy,”Surface Science,vol. 56, 1976, pp. 307-315.
J.R. Adams et al., “Determination of the complex refractive index profiles in P31 ion implanted silicon by ellipsometry,”Surface Science,vol. 49, 1975, pp. 441-458.
J.P. Cortot et al., “Analysis of arsenic and phosphorus ion implanted silicon by spectroscopic ellipsometry,”Appl. Phys. Lett.,vol. 41, No. 1, Jul. 1, 1982, pp. 93-95.
X-F. He et al., “Disorder effects on optical spectra and band structure of Si induced by ion implantation,”J. Appl. Phys.,vol. 66, No. 11, Dec. 1, 1989, pp. 5261-5266.
T. Yamaguchi et al., “Empirical dielectric function of amorphous materials for spectroscopic ellipsometry,”J. Appl. Phys.,vol. 77, No. 9, May 1, 1995, pp. 4673-4676.
Kravetsky, Kulyuk et al., “Reflected optical second harmonic generation as a method for caracterization of ion-implanted, thermal annealed silicon surfaces and silicon-insulator interfaces,”Ion Implanted Technology,vol. 94, 1995, pp. 656-659.
D.E. Aspnes et al., “Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV,”Physical Review B,vol. 29, No. 2, Jan. 15, 1984, pp. 768-779.
Y. Takeda et al., “Large third-order optical nonlinearity of tin microcrystallite-doped silica glass formed by ion implantation,”Appl. Phys. Lett.,vol. 63, No. 25, Dec. 20, 1993, pp. 3420-3422.
J.M.C. England et al., “The dynamic of amorphous-to-crystalline interface evolution in ion-implanted polycrystalline silicon,”J. Appl. Phys.,vol. 73, No. 9, May 1, 1993, pp. 4332-4343.
E. Chason et al., “In situ energy dispersive x□ray reflectivity measurements of H ion bombardment on SiO2/Si and Si,”Appl. Phys. Lett.,vol. 60, No. 19, May 11, 1992, pp. 2353-2355.
Y.Z. Hu et al., “A Comparison of Argon and Hydrogen Ion Etching and Damage in the Si-SiO2 System,”J. Electrochem. Soc.,vol. 139, No. 7, Jul. 1992, pp. 2022-2026.
R.E. Hummel et al., “Ion Implantation Damage and Annealing of Silicon as Characterized by Differential Reflectometry,”J. Electrochem. Soc.,vol. 137, No. 11, Nov. 1990, pp. 3583-3588.
N.V. Nguyen et al., “Spectroscopic ellipsometry studies of crystalline silicon implanted with carbon ions,”J. Appl. Phys.,vol. 67, No. 8, Apr. 15, 1990, pp. 3555-3559.
G.F. Feng et al., “Optical properties of ion-implanted GaAs: The observation of finite-size effects in GaAs microcrystals,”Physical Review B,vol. 40, No. 2, Jul. 15, 1989, pp. 1064-1073.
L. Chen et al., “Transient photomodulation spectroscopy of nanocrystalline hydrogenated silicon,”Physical Review B,vol. 39, No. 8, Mar. 15, 1989, pp. 5121-5127.
A.H.M. Holtslag et al., “Noble-gas ion barbardment on clean silicon surfaces,”Physical Review B,vol. 38, No. 15, Nov. 15, 1988, pp. 10556-10570.
R.E. Hummel et al., “Optical investigations of ion implant damage in silicon,”J. Appl. Phys.,vol. 63, No. 8, Apr. 15, 1988, pp. 2591-2594.
J.L. Buckner et al., “Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon,”J. Appl. Phys.,vol. 63, No. 11, Jun. 1, 1988, pp. 5288-5294.
J. Narayan et al., “Formation and nondestructive characterization of ion implanted silicon-on-insulator layers,”Appl. Phys. Lett.,vol. 51, No. 5, Aug. 3, 1987, pp. 343-345.
P.J. McMarr et al., “Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of interfaces,”J. Appl. Phys.,vol. 59, No. 3, Feb. 1, 1986, pp. 694-701.
X.C. Mu et al., “Ar ion beam and CC14 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen,”J. Appl. Phys.,vol. 58, No. 11, Dec. 1, 1985, pp. 4282-4291.
R.W. Collins et al., “A ellipsometry study of a hydrogenated amorphous silicon based n-i structure,”J. Appl. Phys.,vol. 57, No. 10, May 15, 1985, pp. 4566-4571.
K. Vedam et al., “Nondestructive depth profiling by spectroscopic ellipsometry,”Appl. Phys. Lett.,vol. 47, No. 4, Aug. 15, 1985, pp. 339-341.
M. Erman et al., “Analysis of ion-implanted GaAs by Spectroscopic ellipsometry,”Surface Science,vol. 135, 1983, pp. 353-373.
J.B. Theeten et al., “Depth profiling and interface analysis using spectroscopic ellipsometry,”J. Vac. Sci. Technol.,vol. 20, No. 3, Mar. 1982, pp. 471-475.
J.T. Lue et al., “The wavelength modulation spectrum of ion-implanted silicon,”J. Appl. Phys.,vol. 53, No. 8, Aug. 1982, pp. 5617-5620.
D.E. Aspnes et al., “Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs,”Physical Review Letters,vol. 48, No. 26, Jun. 28, 1982, pp. 1863-1866.
Q. Kim & Y.S. Park, “Ellipsometric investigation of ion-implanted GaAs,”Surface Science,vol. 96, 1980, pp. 307-318.
Q. Kim et al., “Characterization of ion-implanted GaAs by ellipsometry,”J. Appl. Phys.,vol. 51, No. 4, Apr. 1980, pp. 2024-2029.
D.E. Aspnes et al., “An investigation of ion-bombarded and annealed (111) surfaces of Ge by spectroscopic ellipsometry,”Surface Science,vol. 96, 1980, pp. 294-306.
V.M. Gusev et al., “Interference method for measuring the effective thickness of ion-implated layers,”Soviet Physics—Semiconductors,vol. 5, No. 5, Nov. 1971, pp. 737-739.
V.V. Galkin et al., “Implantation of 10-80 keV lithium ions in diamond,”Soviet Physics—Semiconductors,vol. 4, No. 5, Nov. 1970, pp. 709-716.
V.V. Galkin et al., Ion-bombardment induced damage in diamond layers,Soviet Physics—Solid State,vol. 10, No. 3, Sep. 1968, pp. 706-708.
J.M. Leng et al., “Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry,”J. Appl. Phys.,vol. 81, No. 8, Apr. 15, 1997, pp. 3570-3578.
U Zammit et al., “Optical absorption in ion implanted Si films,”Nuclear Instruments and
Hovinen Minna
Opsal Jon
Punnoose Rroy M.
Stallman & Pollock LLP
Therma-Wave, Inc.
Toatley , Jr. Gregory J.
LandOfFree
Combination thermal wave and optical spectroscopy... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Combination thermal wave and optical spectroscopy..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Combination thermal wave and optical spectroscopy... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3514427