Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2009-06-29
2011-11-22
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185140, C365S185180, C257S318000
Reexamination Certificate
active
08064254
ABSTRACT:
A non-volatile memory device includes at least one semiconductor column having a first sidewall and a second sidewall. The device also includes at least one gate electrode is disposed on the first sidewall and at least one control gate electrode disposed on the second sidewall. The device further includes at least one charge storage layer is disposed between the second sidewall and the at least one control gate electrode. The at least one gate electrode and the at least one control gate electrode may be disposed on opposite sides of the at least one semiconductor column such that they commonly control a channel region in the semiconductor column.
REFERENCES:
patent: 6888750 (2005-05-01), Walker et al.
patent: 6992349 (2006-01-01), Lee et al.
patent: 10-093083 (1998-04-01), None
patent: 2007-180389 (2007-07-01), None
patent: 1019990067904 (1999-08-01), None
Kim Suk-pil
Park Yoon-dong
Dinh Son
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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