Columnar 1T-N memory cell structure

Details Columnar 1T-N memory cell structure Columnar 1T-N memory cell structure

2007-04-24

2007-04-24

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S063000, C365S051000, C365S072000, C365S100000, C365S046000, C365S189080

Reexamination Certificate

active

10925243

ABSTRACT:
A memory array architecture incorporates certain advantages from both cross-point and 1T-1Cell architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1Cell architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of memory cells, each column being provided in a respective stacked memory layer.

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