Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1995-04-26
1996-03-26
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Differential sensing
365191, 365207, G11C 702
Patent
active
055026818
ABSTRACT:
A column start signal generation circuit for a memory device, comprising a dummy data storage unit including a plurality of dummy cells for storing dummy data, each of the plurality of dummy cells being connected to a corresponding one of a plurality of word lines and a first dummy bit line or a second dummy bit line, the second dummy bit line being complementary to the first dummy bit line, a dummy data generator for outputting the dummy data to the plurality of dummy cells in the dummy data storage unit in response to a state of a write signal inputted therein, a sense amplification circuit for amplifying the dummy data from one of the plurality of dummy cells in the dummy data storage unit connected to an enabled one of the plurality of word lines, and a sense amplification sensor for sensing a level of an output signal from the sense amplification circuit and outputting a column start signal in accordance with the sensed result.
REFERENCES:
patent: 5325337 (1994-06-01), Buttar
patent: 5335198 (1994-08-01), Van Buskirk et al.
LG Semicon Co. Ltd.
Nelms David C.
Niranjan F.
LandOfFree
Column start signal generation circuit for memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Column start signal generation circuit for memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Column start signal generation circuit for memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-921329