Column select circuit of ferroelectric memory

Details Column select circuit of ferroelectric memory Column select circuit of ferroelectric memory

2005-07-12

2005-07-12

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S205000, C365S190000

Reexamination Certificate

active

06917535

ABSTRACT:
A column select gate in a ferroelectric memory is constituted by only P-channel MOS transistors. While a column select signal is set to low level, and a data line is set to 0 V, data is read out from a memory cell to a bit line. A potential amplified and held by a sense amplifier is transferred to the data line through the current path of the column select gate formed from the P-channel MOS transistors.

REFERENCES:
patent: 6097624 (2000-08-01), Chung et al.
patent: 8-273372 (1996-10-01), None

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