Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1994-04-19
1997-11-18
Dinh, Tan
Static information storage and retrieval
Read/write circuit
Bad bit
371 103, G11C 700
Patent
active
056894643
ABSTRACT:
A column repair circuit for a semiconductor memory having an input/output selection circuit for inputting a control signal, selecting a bit line and a bit bar line corresponding to a faulty memory cell and replacing the selected bit line and bit bar line with a spare bit line and a spare bit bar line. The input/output selection circuit includes an input stage for inputting the control signal, a spare bit line and a spare bit bar line, and a plurality of fuses each having one side connected to the input stage and other side connected to a plurality of resistors. The other side of the resistors are connected to ground for outputting the output signals. The input/output selection circuit further has a plurality of n-channel MOSFETs each including a gate connected to each of the other stages of the plurality of fuses via the resistors in a 2 to 1 manner for inputting the output signals. The drains of the MOSFETS are connected to the spare bit line and spare bit bar line and their sources are connected to each of the plurality of data bit lines and the plurality of data bit bar lines for functioning as a switch. Therefore, the present invention can provide the column repair circuit for a semiconductor memory which is capable of increasing its repair yield by adding the input/output selecting circuit enabling input/output selecting.
REFERENCES:
patent: 4606013 (1986-08-01), Yoshimoto
patent: 4791319 (1988-12-01), Tagami et al.
patent: 4829481 (1989-05-01), Johnson et al.
patent: 5134585 (1992-07-01), Murakami et al.
patent: 5146429 (1992-09-01), Kawai et al.
Kim Jae Hyeoung
Kim Seung Min
Lee Jong Seuk
Lee Sang Ho
Dinh Tan
Hyundai Electronics Industries Co.
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