Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1998-10-30
2000-10-24
Nelms, David
Static information storage and retrieval
Read/write circuit
Bad bit
36523003, 36523006, G11C 700
Patent
active
06137735&
ABSTRACT:
The invention discloses a synchronous DRAM having memory elements arranged in rows and columns, the memory elements being accessible by decoding a memory address applied thereto, normal column drivers for activating appropriate memory elements in response to decoded column addresses signals; redundant column drivers distributed throughout memory banks and flexibly selectable to replace faulty columns within multiple blocks within a bank; and switch means for selectively activating the redundant column and preventing the activation of a defective normal column, whereby the column redundancy method and apparatus minimizes the timing difference between a normal and redundant column paths and which minimizes the number of fuses required to be blown in repairing faulty columns addresses.
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Kikukawa Hirohito
Mar Cynthia
Wei Fangxing
Chari Santosh K.
Matsushita Electric - Industrial Co., Ltd.
Mosaid Technologies Incorporated
Nelms David
Orange John R.S.
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