Color image sensor with enhanced colorimetry and method for...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Reexamination Certificate

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10485695

ABSTRACT:
The invention relates to very small-sized color image sensors.The sensor according to the invention is made by the following method:the formation, on the front face of the semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone comprising photosensitive zones (12) covered with conductive and insulating layers (14, 16) enabling the collection of electrical charges generated in the photosensitive zones,the transfer of the wafer (10) by its front face against the front face of a supporting substrate (20),the elimination of the major part of the thickness of the semiconductive wafer, leaving a very fine semiconductive layer (30) on the substrate, this fine semiconductive layer comprising the photosensitive zones,the deposition and etching of color filters (18) on the semiconductive layer thus thinned.

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patent: 5274250 (1993-12-01), Miyake et al.
patent: 5568574 (1996-10-01), Tanguay et al.
patent: 6091194 (2000-07-01), Dunn et al.
patent: 6252220 (2001-06-01), Jedlicka et al.
patent: 6257491 (2001-07-01), Fazekas et al.

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