Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-02-02
2000-02-29
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20419213, 20419216, 20429813, C23C 1434
Patent
active
060305118
ABSTRACT:
A collimated sputtering method that enables to improve the deposition rate per applied unit power and the bottom coverage is provided. This method contains a step of controlling a condition of a glow discharge in a chamber to increase a rate of a sputtered species that is contained in a specified angle range and that passes through a collimator. The rate of the sputtered species that can pas through the collimator is increased. Also, the rate of the passed species travelling parallel to the normal direction is increased. The sputtering surface of the target contains a crystal plane that is approximately perpendicular to a crystal axis having a shortest interatomic distance.
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"Contribution of Anisotropic Velocity Distribution of Recoil Atoms To Sputtering Yeilds and Angular Distributions of Sputtered Atoms"; Yamamura; Raciation Effects, 1981; vol. 55; pp. 49-56.
NEC Corporation
Nguyen Nam
Ver Steeg Steven H.
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