Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1991-10-23
1994-07-19
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429811, 20429809, 20429819, 2042982, 2041923, C23C 1434
Patent
active
053306287
ABSTRACT:
Sputtering apparatus and method which are particularly suitable for forming step coatings. A workpiece is supported in a chamber, particles are emitted from a sputter source in a substantially uniform manner throughout an area of greater lateral extent than the workpiece, the pressure within the chamber is maintained at a level which is sufficiently low to prevent substantial scattering of the particles between the source and the workpiece, and the particles are passed through a collimating filter having a plurality of transmissive cells with a length to diameter ratio on the order of 1:1 to 3:1 positioned between the source and the workpiece to limit the angles at which the particles can impinge upon the workpiece.
REFERENCES:
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 4994162 (1991-02-01), Armstrong et al.
Kamoshida et al., "The Flowage Bias Sputter Method for Planarized Aluminum Interconnections in VLSIS," IEEE IDEM Journal 86, 1986, pp. 70-73.
Cochran Ronald R.
Demaray R. Ernest
Helmer John C.
Hoffman Vance E.
Park Young H.
Nguyen Nam
Varian Associates Inc.
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