Cold electron plasma reactive ion etching using a rotating elect

Details Cold electron plasma reactive ion etching using a rotating elect Cold electron plasma reactive ion etching using a rotating elect

1998-03-24

2000-02-22

Bettendorf, Justin P.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

31511151, 156345, H05H 146

Patent

active

060283947

ABSTRACT:
An apparatus and method for producing a cold electron plasma for etching a work piece. An electromagnetic wave is generated at a first frequency to produce a plasma in a hot plasma region of the etching chamber, the plasma having positive ions, cold electrons, and hot electrons. A plurality of magnetic coils are disposed about the perimeter of the etching chamber for generating a rotating magnetic field with an electron cyclotron resonance at a second frequency. The rotating magnetic field has a magnetic potential such that the rotating magnetic field: (i) allows the positive ions and the cold electrons to diffuse from the plasma through the rotating magnetic field to produce the cold electron plasma in a cold plasma region over the work piece, and (ii) inhibits the hot electrons from the plasma from diffusing through the rotating magnetic field to the cold electron plasma.

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patent: 5783102 (1998-07-01), Keller
U.S. Pat. application 08/841,218 filed Apr. 29, 1997, by John H. Keller for "Reduction of Semiconductor Structure Damage During Reactive Ion Etching."
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U.S. Pat. application 08/968,194 filed Nov. 12, 1997, by John H. Keller et al. for "Apparatus and Method of Producing a Negative Ion Plasma. "
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G. S. Mathad et al., "Process Dependence of Notching: Simulation of Topography Dependent Charging with Sheath Oscillation Effect," Plasma Processing, Proceedings vol. 96-12, pp.49-60,1996.

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