Codeposition of hafnium-germanium oxides on substrates used...

Details Codeposition of hafnium-germanium oxides on substrates used... Codeposition of hafnium-germanium oxides on substrates used...

2007-12-25

2007-12-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S685000, C438S761000, C438S778000, C438S780000, C438S783000, C438S790000, C257SE21274

Reexamination Certificate

active

11124451

ABSTRACT:
Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a metal other than germanium, and the second precursor compound includes germanium.

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patent: 2004/0175882 (2004-09-01), Ahn et al.
“Ultralow Loss High Delta Silica Germania Planar Waveguides”, R. A. Bellman, G. Bourdon, G. Alibert, A. Beguin, E. Guiot, L. B. Simpson, P. Lehuede, L. Guiziou, E. LeGuen J. Electrochem. Soc., vol. 151, Issue 8, pp. G541-G547 (2004).
“Microwave Discharge Deposition of Oxide Films at Low Temperatures”, D.R. Secrist and J.D. Mackenzie, 1966, American Ceramic Society, pp. 784-788.

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