Coaxial transistor structure

Details Coaxial transistor structure Coaxial transistor structure

2008-10-22

2011-10-04

Sandvik, Benjamin (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29255

Reexamination Certificate

active

08030714

ABSTRACT:
The present invention discloses a coaxial transistor formed on a substrate, particularly a coaxial metal-oxide-semiconductor field-effect transistor (CMOSFET). The chips or substrates of the CMOSFETs can be stacked up and connected via through-holes to form a coaxial complementary metal-oxide-semiconductor field-effect transistor (CCMOSFET), which is both full-symmetric and full-complementarily, has a higher integration and is free of the latch-up problem.

REFERENCES:
patent: 4143392 (1979-03-01), Mylroie
patent: 6525383 (2003-02-01), Stecher
patent: 2007/0096174 (2007-05-01), Higuchi

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