Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-02
2007-01-02
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S386000, C438S459000, C438S618000, C438S597000, C438S598000, C257SE23067, C257SE23174, C257SE21575, C257SE21627, C257SE21641
Reexamination Certificate
active
11329953
ABSTRACT:
A method performed on a wafer having multiple chips, each including a doped semiconductor and substrate, involves etching an annulus trench partially into the substrate, metalizing the annulus trench with a metal, etching a via trench within the periphery of the annulus trench, making a length of the via trench electrically conductive, and thinning the substrate to expose the metal and the electrically conductive material.
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Cubic Wafer Inc.
Estrada Michelle
Morgan & Finnegan , LLP
Stark Jarrett J.
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