Coating apparatus – Gas or vapor deposition – With treating means
Patent
1992-11-20
2000-05-30
Chang, Joni
Coating apparatus
Gas or vapor deposition
With treating means
C23C 1600
Patent
active
060679301
ABSTRACT:
A tubular reaction chamber is mounted on an annular insulating plate disposed on a grounded metallic base plate. A cylindrical outer electrode connected to a high-frequency power supply is disposed around said tubular reaction chamber, and a cylindrical inner electrode is disposed in said reaction chamber coaxially with said cylindrical outer electrode. The cylindrical inner electrode has a plurality of inlet holes defined therein, and a lower end disposed in an opening defined in the metallic base plate and fixed to said metallic base plate. A holder is disposed in said cylindrical inner electrode for supporting a plurality of wafers at spaced intervals.
REFERENCES:
patent: 4367114 (1983-01-01), Steinberg et al.
patent: 4372806 (1983-02-01), Vossen, Jr.
patent: 5099100 (1992-03-01), Bersin et al.
Matsushita Atsushi
Minato Mitsuaki
Uehara Akira
Blackman William D.
Carrier Joseph P.
Chang Joni
Tokyo Ohka Kogyo Co. Ltd.
LandOfFree
Coaxial plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Coaxial plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Coaxial plasma processing apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1903138