Coating, modification and etching of substrate surface with...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S711000, C438S712000, C216S065000, C216S066000, C216S071000, C427S569000, C427S596000

Reexamination Certificate

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06921722

ABSTRACT:
There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.

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patent: 08-255698 (1996-10-01), None
“Digital Chemical Vapor Deposition And Etching Technologies For Semiconductor Processing”; Horiike et. al.; Journal of Vacuum Science and Technology, Part A; 8 (3); 5-1990'; □□pp. 1844-1850.
“Neutral-Beam-Assisted Etching of Silicon Dioxide-a Charge Free Etching Process”; □□Japanese Journal of Applied Physics; Part 1: Regular Papers, Short Notes & Review Papers (1990'); 29(10); Mizutani et. al.; abstract only.
“High Vacuum Versus “Enviromental” Electron Beam Deposition”; Journal of Vacuum Science and Technology; (1996); 14(4); pp 2609-2614; Foleh et al.

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