Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-07-26
2005-07-26
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S711000, C438S712000, C216S065000, C216S066000, C216S071000, C427S569000, C427S596000
Reexamination Certificate
active
06921722
ABSTRACT:
There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.
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Araki Yuji
Horie Kuniaki
Kakutani Momoko
Nagasaka Hiroshi
Ogure Naoaki
Ebara Corporation
Goudreau George A.
Wenderoth , Lind & Ponack, L.L.P.
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