Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2006-12-12
2006-12-12
Norton, Nadine (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
C216S076000, C216S101000
Reexamination Certificate
active
07147794
ABSTRACT:
An optical thin film stack for a dark aperture is deposited using thermal ion-assisted deposition (“IAD”). The IAD provides an energetic deposition of chromium and chromium oxide that results in a dark mirror optical thin film stack with superior etch properties. Edge definition is improved, and the edge profile is controllable by the selection of IAD parameters. An in situ IAD cleaning process can be used to clean the substrate sufficiently so that an intermediate adhesion layer of chromium is not required.
REFERENCES:
patent: 3711171 (1973-01-01), Orkin et al.
patent: 5514503 (1996-05-01), Evans et al.
patent: 5566011 (1996-10-01), Steigerwald
patent: 5666177 (1997-09-01), Hsieh et al.
patent: 5808714 (1998-09-01), Rowlands et al.
patent: 6077621 (2000-06-01), Allen et al.
patent: 6424402 (2002-07-01), Kishimoto
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
JDS Uniphase Corporation
Norton Nadine
Tran Binh X.
LandOfFree
Coating for forming a high definition aperture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Coating for forming a high definition aperture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Coating for forming a high definition aperture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3714271