Coated semiconductor wafer, and process and apparatus for...

Details Coated semiconductor wafer, and process and apparatus for... Coated semiconductor wafer, and process and apparatus for...

2007-10-23

2007-10-23

Everhart, Caridad M. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C257SE21128, C257S618000, C118S732000

Reexamination Certificate

active

11283272

ABSTRACT:
A susceptor configured to receive a semiconductor wafer for deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition (CVD) has a gas-permeable structure with a porosity of at least 15%, a density of from 0.5 to 1.5 g/cm3, a pore diameter of less than 0.1 mm and an internal surface area of the pores which is greater than 10,000 cm2/cm3. Semiconductor wafers having front surface coated by chemical vapor deposition (CVD) and a polished or etched back surface, prepared using the gas-permeable susceptor, have a nanotopography of the back surface, expressed as the PV (=peak to valley) height fluctuation, of less than 5 nm, and at the same time the halo of the back surface, expressed as haze, is less than 5 ppm.

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A. Heinzel & F. Mahlendorf, submission to the second forum on Industrial Property Research in North Rhine-Westphalia, Gelsenkirchen, Feb. 12, 2003.
Patent Abstract of Japan corresponding to JP 60-254610.

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