Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-07-05
2009-12-08
Picardat, Kevin M (Department: 2822)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192100, C204S192150, C438S606000, C438S607000, C438S608000, C438S609000, C438S658000, C438S659000, C438S688000
Reexamination Certificate
active
07628896
ABSTRACT:
A transparent conductive oxide (TCO) based film is formed on a substrate. The film may be formed by sputter-depositing, so as to include both a primary dopant (e.g., Al) and a co-dopant (e.g., Ag). The benefit of using the co-dopant in depositing the TCO inclusive film may be two-fold: (a) it may prevent or reduce self-compensation of the primary dopant by a more proper positioning of the Fermi level, and/or (b) it may promote declustering of the primary dopant, thereby freeing up space in the metal sublattice and permitting more primary dopant to create electrically active centers so as to improve conductivity of the film. Accordingly, the use of the co-dopant permits the primary dopant to be more effective in enhancing conductivity of the TCO inclusive film, without significantly sacrificing visible transmission characteristics. An example TCO in certain embodiments is ZnAlOx:Ag.
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Krasnov Alexey
Lu Yiwei
Au Bac H
Guardian Industries Corp.
Nixon & Vanderhye P.C.
Picardat Kevin M
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