Co-based alloy sputter target and process of manufacturing the s

Details Co-based alloy sputter target and process of manufacturing the s Co-based alloy sputter target and process of manufacturing the s

1987-07-07

1989-05-23

Walton, Donald L.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

148425, 148313, 204298, C23C 1400

Patent

active

048328103

ABSTRACT:
A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.
The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.

REFERENCES:
patent: 3356542 (1967-12-01), Smith
patent: 3390443 (1968-07-01), Gould et al.
patent: 3494807 (1970-02-01), Stuart et al.
patent: 3695944 (1972-12-01), Stroble
patent: 4414087 (1983-11-01), Meckel
Thornton, Zeitschrift Fur Metallkunde, vol. 75, No. 11, Nov. 1984, pp. 847-854.
Patent Abstracts of Japan, vol. 9, No. 121 (M-383) [1844], May 25, 1985.

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