CMP wafer contamination reduced by insitu clean

Details CMP wafer contamination reduced by insitu clean CMP wafer contamination reduced by insitu clean

2005-08-19

2008-03-18

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S689000, C438S202000, C451S041000, C451S036000, C430S311000, C430S322000

Reexamination Certificate

active

07344989

ABSTRACT:
Reducing CMP wafer contamination by in-situ clean is disclosed herein. The invention can be employed in a method in which a conductive layer is formed on a surface of a semiconductor wafer. After a portion of the conductive layer is removed, an acidic solution is directly or indirectly applied to the semiconductor wafer. Then the semiconductor wafer is engaged with a polishing pad as the acidic solution is applied directly or indirectly to the semiconductor wafer. In one embodiment, the portion of the conductive layer is removed by a CMP tool, and the semiconductor wafer is engaged with the polishing pad before the semiconductor is removed from the CMP tool.

REFERENCES:
patent: 6145148 (2000-11-01), Hymes et al.
patent: 6737221 (2004-05-01), Futase et al.
S. Wolf, Silicon Processing for the VLSI Era, vol. 4, Lattice Press (2002), pp. 377, 381-384.
Niu, Pao-Kang et al.; “The Process Window Study of Oxide Buffing After WCMP Process”;;TSMC; 121, Park Ave. 3; Science-Based Industrial Park Hsin-Chu; Taiwan, R.O.C.; Mar. 7-8, 2001; CMP-MIC Conference; 2001 IMIC—600P/00/0375; pp. 375-378.
Shieh, Alex et al., “Characterization of Oxide Buffing in W-CMP” MACRONIX International Co., LTD., Advanced Module Process Development Division/Silicon Technology Laboratory; No. 16, Li-Hsin Road, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C.; Mar. 7-8, 2001; CMP-MIC Conference; 2001 IMIC—600P/00/0383; pp. 383-386.
Yan, Y.F.;“Tungsten CMP Process With On-Table Oxide Buff”; Bell Laboratories, Lucent Technologies, Cirent Semiconductor; 9333 S. John Young Pkwy.; Orlando, Florida, 32819; Mar. 7-8, 2001, CMP-MIC Conference, 2001 IMIC—600P/00/0131; pp. 131-135.

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