CMP system for metal deposition

Details CMP system for metal deposition CMP system for metal deposition

2006-08-01

2006-08-01

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C438S678000, C438S687000, C438S695000, C438S697000, C438S699000, C438S700000

Reexamination Certificate

active

07084059

ABSTRACT:
A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.

REFERENCES:
patent: 3436259 (1969-04-01), Regh et al.
patent: 4563217 (1986-01-01), Kikuchi et al.
patent: 4576685 (1986-03-01), Goffredo et al.
patent: 5256565 (1993-10-01), Bernhardt et al.
patent: 5965211 (1999-10-01), Kondo et al.
patent: 6004880 (1999-12-01), Liu et al.
patent: 6056864 (2000-05-01), Cheung
patent: 6090239 (2000-07-01), Liu et al.
patent: 6110011 (2000-08-01), Somekh et al.
patent: 6121152 (2000-09-01), Adams et al.
patent: 6132586 (2000-10-01), Adams et al.
patent: 6143155 (2000-11-01), Adams et al.
patent: 6176992 (2001-01-01), Talieh
patent: 6225223 (2001-05-01), Liu et al.
patent: 6313039 (2001-11-01), Small et al.
patent: 6341998 (2002-01-01), Zhang
patent: 6354916 (2002-03-01), Uzoh et al.
patent: 6355153 (2002-03-01), Uzoh et al.
patent: 2002/0084529 (2002-07-01), Dubin et al.
patent: 2002/0146965 (2002-10-01), Thomas et al.
patent: 2003/0040188 (2003-02-01), Hsu et al.
patent: 2003/0164302 (2003-09-01), Uzoh et al.

Affiliated with

Also associated with

Rating

CMP system for metal deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMP system for metal deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMP system for metal deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3661680