CMP slurry for forming aluminum film, CMP method using the...

Details CMP slurry for forming aluminum film, CMP method using the... CMP slurry for forming aluminum film, CMP method using the...

2007-07-24

2007-07-24

Vinh, Lan (Department: 1765)

Compositions

Etching or brightening compositions

C216S088000, C216S089000, C216S099000, C216S102000, C438S631000, C438S633000, C438S693000, C438S692000

Reexamination Certificate

active

10961411

ABSTRACT:
A first chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, and an oxide film removal retarder which reduces a removal rate of the silicon oxide film. A second chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, an oxide film removal retarder which reduces a removal rate of silicon oxide, and a defect prevention agent which inhibits scratch defects and/or corrosion defects at a surface of an aluminum film. In a one-step CMP process, either of the first or second slurry is used throughout CMP of an aluminum layer until an upper surface of an underlying silicon oxide layer is exposed. In a two-step CMP process, the first slurry is used in an initial CMP of the aluminum layer, and then the second slurry is used in a subsequent CMP until the upper surface of the underlying silicon layer is exposed.

REFERENCES:
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patent: 6375545 (2002-04-01), Yano et al.
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patent: 2004/0060825 (2004-04-01), Nagai et al.
patent: 1020020030138 (2002-04-01), None
patent: WO 01/76819 (2001-10-01), None

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