Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-08-18
1999-10-26
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438692, 438691, 438759, 216 88, 216 84, 156345, H01L 214763, H01L 21302, H01L 2131
Patent
active
059727870
ABSTRACT:
The method of polishing metal layers on wafers comprises the steps of: providing indicator areas on said wafer, said indicator areas having combinations of line widths and pattern factors violating existing ground rules of metal lines thereby said indicator areas being dished out during said polishing using a chemical-mechanical polisher to polish the metal layers to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas, and adjusting the operation of the chemical-mechanical polisher in response to the inspection of the indicator areas. The indicator areas may include macroblocks comprised of a multitude of individual blocks. The wafer may be inspected by optically identifying the polishing state of to blocks in the macroblock. Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.
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Boggs Karl E.
Lin Chenting
Nuetzel Joachim F.
Ploessl Robert
Ronay Maria
Bowers Charles
Capella Steven
International Business Machines Corp.
Lee Sam
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