CMP methods avoiding edge erosion and related wafer

Details CMP methods avoiding edge erosion and related wafer CMP methods avoiding edge erosion and related wafer

2008-04-23

2010-11-16

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257SE21438, C438S690000, C438S974000

Reexamination Certificate

active

07833907

ABSTRACT:
Methods of avoiding chemical mechanical polish (CMP) edge erosion and a related wafer are disclosed. In one embodiment, the method includes providing a wafer; forming a first material across the wafer; forming a second material at an outer edge region of the wafer, leaving a central region of the wafer devoid of the second material; and performing chemical mechanical polishing (CMP) on the wafer. The second material diminishes CMP edge erosion.

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