Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-08-30
2005-08-30
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C252S079100, C252S079400
Reexamination Certificate
active
06936543
ABSTRACT:
The invention provides methods of polishing a substrate comprising (i) contacting a substrate comprising at least one metal layer comprising copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer comprising copper to polish the substrate. The CMP system comprises (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate comprising a first metal layer and a second, different metal layer. The first metal layer is polishing with a first CMP system comprising an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system comprising (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier.
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U.S. Appl. No. 10/165,100, filed Jun. 7, 2002, pending.
Carter Phillip
Chamberlain Jeffrey P.
Chou Homer
Hawkins Joseph D.
Moeggenborg Kevin J.
Cabot Microelectronics Corporation
Koszyk Francis
Norton Nadine G.
Umez-Eronini Lynette T.
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