CMP method providing reduced thickness variations

Details CMP method providing reduced thickness variations CMP method providing reduced thickness variations

2006-10-05

2008-11-18

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S689000, C257SE21267, C257SE21293, C257SE21304

Reexamination Certificate

active

07452817

ABSTRACT:
A chemical mechanical polishing (CMP) method is disclosed for use in the fabrication of a semiconductor device having dense and sparse regions. The method uses an abrasive stop layer formed on the dense and sparse regions to control polishing of a material layer formed on the abrasive stop layer by a rigid, fixed abrasive polishing pad.

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