CMP compositions for low-k dielectric materials

Details CMP compositions for low-k dielectric materials CMP compositions for low-k dielectric materials

2005-12-13

2005-12-13

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C252S079100, C252S079400

Reexamination Certificate

active

06974777

ABSTRACT:
The invention provides a method of polishing a substrate containing a low-k dielectric layer comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate.

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McClatchie S. et al., “Low Dielectric Constant Oxide Films Deposited Using CVD Techniques” DUMIC Conference Proceedings, Feb., 1998, pps. 311-318.

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