CMP abrasive, method for polishing substrate and method for...

Abrasive tool making process – material – or composition – With inorganic material

Reexamination Certificate

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Details

C051S308000, C051S309000, C451S028000, C451S041000, C451S060000

Reexamination Certificate

active

08002860

ABSTRACT:
The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.

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Supplementary European Search Report, for Application No. EP 00 93 7240, dated Oct. 24, 2002.

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