Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-12-05
2006-12-05
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S019000, C257S338000, C257S357000, C257S369000, C257S371000
Reexamination Certificate
active
07145166
ABSTRACT:
Disclosed is a method of manufacturing microelectronic devices including forming a silicon substrate with first and second wells of different dopant characteristics, forming a first strained silicon-germanium-carbon layer of a first formulation proximate to the first well, and forming a second strained silicon-germanium-carbon layer of a second formulation distinct from the first formulation proximate to the second well. Capping and insulating layers, gate structures, spacers, and sources and drains are then formed, thereby creating a CMOS device with independently strained channels.
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Haynes and Boone LLP
Soward Ida M.
Taiwan Semiconductor Manufacturing Company , Ltd.
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