Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-01-07
2000-05-30
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438154, H01L 2100
Patent
active
060690305
ABSTRACT:
A repairable CMOSFET includes an insulating substrate, a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type formed on the insulating substrate, defined as a center and two edges, and spaced apart from each other by a predetermined distance, a third semiconductor layer of a second conductivity type formed to have a predetermined length extending from the edges of the first semiconductor layer of a first conductivity type toward the second semiconductor layer of a second conductivity type, a fourth semiconductor layer of a first conductivity type formed to have a predetermined length extending from the edges of the second semiconductor layer of a second conductivity type to have symmetry to the third semiconductor layer of a second conductivity type, a insulating layer formed on the entire surfaces of the first, second, third, and fourth semiconductor layers, and a gate electrode formed between the centers of the first and second semiconductor layers, among the first, second, third, and fourth semiconductor layers.
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LG Semicon Co. Ltd.
Lindsay Jr. Walter L.
Niebling John F.
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