CMOS with parasitic bipolar transistor

Electronic digital logic circuitry – Interface – Current driving

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Details

327544, 326103, H03K 1908, H03K 190948

Patent

active

057239886

ABSTRACT:
A device is disclosed which combines the advantages of CMOS and bipolar using an existing parasitic bipolar device. As such high on-chip density is attainable with the device along with high speed capability while maintaining low power advantages.

REFERENCES:
patent: 4441117 (1984-04-01), Zommer
patent: 4465945 (1984-08-01), Yin
patent: 4675561 (1987-06-01), Bowers
patent: 5004936 (1991-04-01), Andresen
patent: 5140190 (1992-08-01), Yoo et al.
patent: 5241194 (1993-08-01), Baliga

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