Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-09-12
2006-09-12
Tran, Tan N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S433000, C257S434000, C257S436000, C257S437000
Reexamination Certificate
active
07105904
ABSTRACT:
A CMOS type of image sensor module for use in a mobile camera or a PC camera includes an image sensoring semiconductor chip encapsulated in a transparent block of polymeric material on a substrate having a circuit to which the ship is connected. The image sensoring semiconductor chip is disposed on an upper surface of the substrate as spaced vertically from a digital signal processing second semiconductor chip mounted on a lower surface of the substrate. The transparent polymeric encapsulation material constitutes a sealing resin unit. The digital signal processing second semiconductor chip may also be encapsulated by the sealing resin unit. The sealing transfer unit can be formed by injection and/or transfer molding. The forming of the sealing resin unit by a single molding process keeps production costs low.
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Tran Tan N.
Volentine Francos & Whitt PLLC
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