Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Using epitaxial lateral overgrowth
Reexamination Certificate
2007-03-27
2007-03-27
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Using epitaxial lateral overgrowth
C438S357000, C438S413000
Reexamination Certificate
active
11029740
ABSTRACT:
This invention adds to the art of replacement source-drain cMOS transistors. Processes may involve etching a recess in the substrate material using one equipment set, then performing deposition in another. Disclosed is a method to perform the etch and subsequent deposition in the same reactor without atmospheric exposure. In-situ etching of the source-drain recess for replacement source-drain applications provides several advantages over state of the art ex-situ etching. Transistor drive current is improved by: (1) Eliminating contamination of the silicon-epilayer interface when the as-etched surface is exposed to atmosphere and (2) Precise control over the shape of the etch recess. Deposition may be done by a variety of techniques including selective and non-selective methods. In the case of blanket deposition, a measure to avoid amorphous deposition in performance critical regions is also presented.
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Glass Glenn A.
Hattendorf Michael L.
Murthy Anand
Wank Jeffrey R.
Westmeyer Andrew N.
Blakely , Sokoloff, Taylor & Zafman LLP
Le Dung A.
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