Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-31
2010-11-30
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21633
Reexamination Certificate
active
07843012
ABSTRACT:
The CMOS transistor of the present invention includes deep halo doped regions in the substrate, which can avoid the occurrence of latch-up. In addition, the fabrication of the deep halo doped regions is integrated into the process of making the lightly doped drains or the source/drain doped regions, and therefore no extra mask is required.
REFERENCES:
patent: 2005/0035382 (2005-02-01), Shinohara et al.
Chao Fang-Mei
Chen Ming-I
Gurley Lynne A
Hsu Winston
Margo Scott
Matthews Colleen A
United Microelectronics Corp.
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